SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE
نویسندگان
چکیده
منابع مشابه
GaInNAs ( Sb ) lasers grown on GaAs by MBE
We demonstrate the first 1.5 mm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mm. A 1.465mm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930A/cm per quantum well, a differential quantum efficiency of 0.30W/A (both facets), an ex...
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An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. ...
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P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...
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ژورنال
عنوان ژورنال: Journal of the Korean Physical Society
سال: 2018
ISSN: 0374-4884,1976-8524
DOI: 10.3938/jkps.73.1604